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HZS12A2 103J63 TD8752BH AAMDB OH1881 R12SH6TR 00095 M5321
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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX37
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DESCRIPTION *With TO-3 package *High breakdown voltage *DARLINGTON APPLICATIONS *Power switching *Automotive ignition *Solenoid drivers *Series and shunt regulators.
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL VCBO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC1100 CONDITIONS Open emitter Open collector VALUE 400 7 15 4 35 -65~150 -65~150 UNIT V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.5 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
www..com
BUX37
SYMBOL
MAX
UNIT
VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICBO ICEO hFE-1 hFE-2
Collector-emitter sustaining voltage
IC=0.1A; IB=0 IE=50mA; IC=0 IC=7 A;IB=0.07 A IC=10 A;IB=0.15A IC=10 A;IB=0.15A VCB=400V;IE=0 VCE=400V;IB=0 IC=8A ; VCE=5V IC=15A ; VCE=5V
400
V
Emitter-base breakdown voltage
7
V
Collector-emitter saturation voltage
1.5
V
Collector-emitter saturation voltage
2.0
V
Base-emitter saturation voltage
2.7
V
Collector cut-off current
0.1
mA
Collector cut-off current
0.25
mA
DC current gain
100
DC current gain
20
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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BUX37
Fig.2 Outline dimensions
3


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